发明名称 |
Data writing method and data storage device |
摘要 |
The invention provides a data writing method and device for a flash memory. According to the method, the flash memory obtains write data to be written to the flash memory, directs the flash memory to write a data page of the write data to a strong page of a target pair page of a target block, and directs the flash memory to write first predetermined data to a weak page of the target pair page for extending the data duration of the strong page of the target pair page. |
申请公布号 |
US9082491(B2) |
申请公布日期 |
2015.07.14 |
申请号 |
US201314105851 |
申请日期 |
2013.12.13 |
申请人 |
SILICON MOTION, INC. |
发明人 |
Lin Cheng-Wei |
分类号 |
G11C11/34;G11C16/10 |
主分类号 |
G11C11/34 |
代理机构 |
McClure, Qualey & Rodack, LLP |
代理人 |
McClure, Qualey & Rodack, LLP |
主权项 |
1. A data writing method for a flash memory, comprising:
obtaining write data to be written to the flash memory; directing the flash memory to write a data page of the write data to a strong page of a target pair page of a target block; and directing the flash memory to write first predetermined data to a weak page of the target pair page for extending the data duration of the strong page of the target pair page. |
地址 |
Jhubei, Hsinchu County TW |