Test structure for semiconductor process and method for monitoring semiconductor process

摘要

A monitoring method of a semiconductor process includes the following steps. A semiconductor substrate is provided, and a test structure is formed thereon. The method of forming the test structure includes the following steps. A first doped region and a second doped region are formed in the semiconductor substrate, and an insulating layer is formed on the semiconductor substrate. Subsequently, a conductive layer is directly formed on the insulating layer to complete the formation of the test structure, in which the conductive layer in a floating state partially overlaps the first doped region and partially overlaps the second doped region. Then, a voltage signal is applied to the test structure and the breakdown voltage (Vbd) between the first doped region and the second doped region is measured.

主权项

1. A test structure for a semiconductor process, comprising:
a semiconductor substrate with a gate structure; a first doped region disposed in the semiconductor substrate; a second doped region disposed in the semiconductor substrate; an inter-layer dielectric (ILD) layer disposed on the semiconductor substrate,
wherein the ILD layer covers the gate structure; and a conductive layer disposed directly on the ILD layer, wherein the conductive layer partially overlaps the first doped region and partially overlaps the second doped region, the conductive layer is laterally spaced apart from the gate structure and is in a floating state, the conductive layer overlaps the semiconductor substrate between the first doped region and the second doped region, and only the semiconductor substrate is disposed between the first doped region and the second doped region.