Semiconductor memory device and memory system including the same

摘要

A semiconductor memory device and a memory system including the same are provided. The semiconductor memory device includes a first memory unit and a plurality of second memory unit, each including a plurality of memory cells and page buffers corresponding to the memory cells, and a redundancy memory unit including a plurality of redundancy memory cells and a plurality of redundancy page buffers corresponding to the redundancy memory cells. First input/output (I/O) data lines coupled to the first memory unit and second I/O data lines coupled to the second memory unit are coupled to the redundancy memory unit.

主权项

1. A semiconductor memory device comprising:
a first memory unit and a second memory unit, each including a plurality of memory cells and a plurality of page buffers corresponding to the memory cells; and a redundancy memory unit including a plurality of redundancy memory cells and a plurality of redundancy page buffers corresponding to the redundancy memory cells, wherein first input/output (I/O) data lines coupled to the first memory unit and second I/O data lines coupled to the second memory unit are coupled to the redundancy memory unit, wherein, when memory cells having the same address in the first and second memory units are determined as defective cells, different redundancy column selection signals are assigned by coding addresses corresponding to the first memory unit and the second memory unit, respectively.