SANDWICH DAMASCENE RESISTOR

摘要

A method is provided for forming sandwich damascene resistors in MOL processes and the resulting devices. Embodiments include forming on a substrate a film stack including an interlayer dielectric (ILD), a first dielectric layer, and a sacrifice layer (SL); removing a portion of the SL and the first dielectric layer, forming a first cavity; conformally forming a layer of resistive material in the first cavity and over the SL; depositing a second dielectric layer over the layer of resistive material and filling the first cavity; and removing the second dielectric layer, the layer of resistive material not in the first cavity, and at least a partial depth of the SL

主权项

1. A device comprising:
a substrate; an interlayer dielectric (ILD) on the substrate; a first dielectric layer on the ILD; a first cavity formed in the first dielectric layer; a layer of resistive material lining the first cavity; and a second dielectric layer filling the first cavity.