Radio Frequency and Microwave Devices and Methods of Use

摘要

Radio frequency and microwave devices and methods of use are provided herein. According to some embodiments, the present technology may comprise an ohmic layer for use in a field effect transistor that includes a plurality of strips disposed on a substrate, the plurality of strips comprising alternating source strips and drain strips, with adjacent strips being spaced apart from one another to form a series of channels, a gate finger segment disposed in each of the series of channels, and a plurality of gate finger pads disposed in an alternating pattern around a periphery of the plurality of strips such that each gate finger segment is associated with two gate finger pads.

主权项

1. A dual gate device comprising:
an ohmic layer disposed on a compound semiconductor layer, the ohmic layer comprising:
a plurality of source ohmic metal fingers,a plurality of drain ohmic metal fingers disposed alternating between the source ohmic metal fingers,a channel separating each of the source and drain ohmic metal fingers,a first gate finger and a second gate finger disposed in each channel,a plurality of first gate pads each coupled to two of the first gate fingers, each of the first gate fingers coupled to two of the first gate pads, anda plurality of second gate pads each coupled to two of the second gate fingers, each of the second gate fingers coupled to two of the second gate pads; a first dielectric material disposed on the ohmic layer; and a first metal layer disposed on the first dielectric material, the first metal layer comprising:
a plurality of source interconnect metal strips disposed above the source and drain ohmic metal fingers, each of the source interconnect metal strips coupled through the first dielectric material to a plurality of the source ohmic metal fingers using vias,a plurality of drain interconnect metal strips disposed above the source and drain ohmic metal fingers and alternating between the source interconnect metal strips, each of the drain interconnect metal strips coupled through the first dielectric material to a plurality of the drain ohmic metal fingers using vias,a first gate metal strip coupled through the first dielectric material to a plurality of the first gate pads using vias, anda second gate metal strip coupled through the first dielectric material to a plurality of the second gate pads using vias.