发明名称 APPARATUS AND METHOD FOR PRODUCING POLYCRYSTALLINE SILICON USING HORIZONTAL REACTOR
摘要 Provided is an apparatus for producing polysilicon using a horizontal reactor, comprising: a horizontal reactive pipe which comprise a source gas supply port which is placed at an insulation pipe of the horizontal reactive pipe and contains reactive gas and reducing gas, a residual gas discharge port, a reactive surface which comes in contact with source gas, and an opening part which is placed at the lower surface of the horizontal reactive pipe to discharge melted polysilicon generated by the reaction of the source gas; a first heating means for heating the reactive surface of the horizontal reactive pipe; and a polysilicon capturing container which captures melted polysilicon discharged from the opening part placed at the lower surface of the horizontal reaction pipe. Also provided is a method for producing polysilicon using the apparatus for producing polysilicon.
申请公布号 KR20150064326(A) 申请公布日期 2015.06.11
申请号 KR20130148911 申请日期 2013.12.03
申请人 LG CHEM. LTD. 发明人 JANG, EUN SU;KIM, JEONG KYU;KIM, YOO SEOK;YOO, JIN HYOUNG;LEE, JUNG WOO
分类号 B01J19/24;C01B33/04 主分类号 B01J19/24
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