发明名称 Semiconductor device and manufacturing method thereof
摘要 A semiconductor device and a manufacturing method thereof are provided which can suppress corrosion by chemicals in processes, while preventing generation of thermal stress on a mark. A semiconductor device includes a semiconductor layer with a front-side main surface and a back-side main surface opposed to the front-side main surface, a plurality of light receiving elements formed in the semiconductor layer for performing photoelectric conversion, a light receiving lens disposed above the back-side main surface for supplying light to the light receiving element, and a mark formed inside the semiconductor layer. The mark extends from the front-side main surface to the back-side main surface. The mark has a deeply located surface recessed toward the front-side main surface rather than the back-side main surface. The deeply located surface is formed of silicon.
申请公布号 US9048355(B2) 申请公布日期 2015.06.02
申请号 US201313951440 申请日期 2013.07.25
申请人 Renesas Electronics Corporation 发明人 Kashihara Keiichiro
分类号 H01L21/00;H01L31/0232;H01L31/18;H01L23/544;H01L27/146 主分类号 H01L21/00
代理机构 Miles & Stockbridge P.C. 代理人 Miles & Stockbridge P.C.
主权项 1. A manufacturing method of a semiconductor device, comprising the steps of: providing a semiconductor substrate with a front-side main surface and an opposed main surface, which is opposed to the front-side main surface, said semiconductor substrate having an insulating layer embedded therein between the front-side main surface and the opposed main surface and a semiconductor layer between the front-side main surface and the insulating layer; forming a trench extending from the front-side main surface to a back-side of the semiconductor layer, the back-side of the semiconductor layer facing the insulating layer; forming a mark within the trench, said mark having a deeply located surface recessed with respect to the back-side of the semiconductor layer, said mark comprising at least a film of material that is the same as a material of said semiconductor layer; forming in the semiconductor layer a plurality of light receiving elements at the front-side main surface; removing a region of the semiconductor substrate that is between the opposed main surface and the back-side of the semiconductor layer; and disposing a light receiving lens for supplying light to one of the light receiving elements using the mark for alignment.
地址 Kawasaki-shi JP