发明名称 Error estimation module and estimation method thereof for flash memory
摘要 The present invention relates to the field of data storage, and more particularly to an estimation technology in an error correction process of a flash memory. The present invention provides an error estimation module and an error estimation method thereof for a flash memory. The estimation module mainly includes a timer, a quantification index table, a storage page table, and an error index table. The error estimation method of a flash memory includes: creating rewriting and programming error a priori data, and estimating an error rate of the flash memory by using special physical signals in a flash memory device to provide proper error estimation for an error correction algorithm of the flash memory. The present invention is applicable to a solid-state hard disk controller, a flash memory controller, and the like, where the flash memory device is used as a storage medium, so that the reliability of the flash memory device is improved.
申请公布号 US9047212(B2) 申请公布日期 2015.06.02
申请号 US201214119121 申请日期 2012.03.23
申请人 MEMORIGHT (WUHAN) CO., LTD. 发明人 Xing Jipeng;Huo Wenjie;Zhang Jie
分类号 G11C29/00;G06F11/10 主分类号 G11C29/00
代理机构 Houtteman Law LLC 代理人 Houtteman Law LLC
主权项 1. An error estimation device for a flash memory, mainly comprising a timer, a quantification index table, a storage page table, and an error index table, wherein, the timer is used to record a programming time or an erasing time of the flash memory, wherein the programming time or the erasing time collected by the timer serves as an input as a quantification index; the quantification index table is used to record a mapping between a programming level and a programming time and a mapping between an erasing level and an erasing time, wherein the erasing level represents a life state of a flash memory block corresponding to a physical address, and the programming level represents a life state of a page inside the flash memory block; the storage page table comprises several continuous storage units, wherein each continuous storage unit is used to record an erasing level and a programming level of one flash memory block, the erasing level of the flash memory block is saved at the beginning of the continuous storage unit, and the programming levels of pages inside the flash memory block are sequentially saved inside the continuous storage unit; the error index table contains a block error index table and a page error index table, wherein the block error index table records a mapping between an erasing level and a corresponding block error rate, and the page error index table records a mapping between a programming level and a corresponding page error rate; and the error estimation module for a flash memory receives timing information and an enable signal sent by a flash memory controller or an R/B signal sent by a flash memory chip as an input, and outputs an error estimation value to an error check module.
地址 Wuhan, Hubei CN