Power semiconductor device

摘要

A power semiconductor device according to an embodiment includes an element portion in which MOSFET elements are provided and a termination portion provided around the element portion, and has pillar layers provided respectively in parallel to each other in a semiconductor substrate. The device includes a first trench and a first insulation film. The first trench is provided between end portions of the pillar layers, in the semiconductor substrate at the termination portion exposed from a source electrode of the MOSFET elements. The first insulation film is provided on a side surface and a bottom surface of the first trench.

主权项

1. A power semiconductor device including an element portion, and a termination portion provided around the element portion, the power semiconductor device comprising:
a semiconductor substrate of a first-conductivity type, the semiconductor substrate having an upper surface and a lower surface; a first impurity layer of a second-conductivity type that is provided in the element portion at the upper surface of the semiconductor substrate; a second impurity layer of the first-conductivity type that is provided on an upper end of the first impurity layer at the upper surface of the semiconductor substrate; a gate electrode separated from the first impurity layer by a gate insulation film; a first electrode provided on the lower surface of the semiconductor substrate; a second electrode in contact with the first impurity layer and on the upper surface of the semiconductor substrate; a plurality of pillar layers of the second-conductivity type provided in the semiconductor substrate in the element portion and the termination portion, each pillar layer extending along a direction across the element portion into the termination portion; and a first insulation film provided in the semiconductor substrate in the termination portion, the first insulation film being provided between pillar layers in the plurality of pillar layers that are adjacent to each other.