Method and structure of monolithically integrated IC and resistive memory using IC foundry-compatible processes

摘要

The present invention relates to integrating a resistive memory device on top of an IC substrate monolithically using IC-foundry compatible processes. A method for forming an integrated circuit includes receiving a semiconductor substrate having a CMOS IC device formed on a surface region, forming a dielectric layer overlying the CMOS IC device, forming first electrodes over the dielectric layer in a first direction, forming second electrodes over the first electrodes in along a second direction different from the first direction, and forming a two-terminal resistive memory cell at each intersection of the first electrodes and the second electrodes using foundry-compatible processes, including: forming a resistive switching material having a controllable resistance, disposing an interface material including p-doped polycrystalline silicon germanium—containing material between the resistive switching material and the first electrodes, and disposing an active metal material between the resistive switching material and the second electrodes.

主权项

1. A monolithic integrated circuit and crossbar array comprising:
a semiconductor substrate having a first surface region; one or more CMOS integrated circuit devices provided on the surface region of the semiconductor substrate; a dielectric layer overlying the one or more CMOS integrated circuit devices; a first plurality of electrodes overlying the dielectric layer and extending along a first direction; a second plurality of electrodes overlying the first plurality of electrodes and extending along a second direction, wherein the first direction and the second direction are different; and wherein intersections of the first plurality of electrodes and the second plurality of electrodes define a two-terminal resistive memory cell comprising:
a resistive switching material having a controllable resistance; an interface material disposed between the resistive switching material and the first plurality of electrodes, wherein the interface material comprises a foundry-compatible p-doped polycrystalline silicon germanium—containing material; and an active metal material disposed between the resistive switching material and the second plurality of electrodes.