Semiconductor device, display device, and method for manufacturing semiconductor device

摘要

A purpose of the present invention is to reduce the driving voltage of a semiconductor device that includes an n-type TFT and a p-type TFT. Disclosed is a semiconductor device in which an n-channel type first thin film transistor (100) and a p-channel type second thin film transistor (200) are provided on the plane of a substrate (1). A first semiconductor layer (11) of the first thin film transistor (100) has a main portion, which is sandwiched between the upper surface and the lower surface of the first semiconductor layer (11), and an slanted portion, which is sandwiched by the side face and the lower surface of the first semiconductor layer (11). A second semiconductor layer (20) has a main portion, which is sandwiched between the upper surface and the lower surface of the second semiconductor layer (20), and a slanted portion, which is sandwiched between the side face and the lower surface of the second semiconductor layer (20). The inclination angle of the side face of the second semiconductor layer (20) relative to the plane of the substrate (1) is larger than the inclination angle of the side face of the first semiconductor layer (11) relative to the plane of the substrate (1).

主权项

1. A semiconductor device that has a first thin film transistor of n-channel type and a second thin film transistor of p-channel type on a face of a single substrate,
wherein the first thin film transistor comprises: a first semiconductor layer that has a first channel region, a first source region, and a first drain region; a first gate electrode disposed above the first channel region; and a gate insulating film disposed between the first semiconductor layer and the first gate electrode, wherein the second thin film transistor comprises: a second semiconductor layer that has a second channel region, a second source region, and a second drain region; a second gate electrode disposed above the second channel region; and a gate insulating film disposed between the second semiconductor layer and the second gate electrode, wherein the first semiconductor layer has a main portion that is sandwiched by a upper surface and a lower surface of the first semiconductor layer and a slanted portion that is sandwiched by a side face and the lower surface of the first semiconductor layer, wherein the second semiconductor layer has a main portion that is sandwiched by a upper surface and a lower surface of the second semiconductor layer and a slanted portion that is sandwiched by a side face and the lower surface of the second semiconductor layer, and wherein an inclination angle of the side face of the second semiconductor layer relative to a plane of the substrate is larger than an inclination angle of the side face of the first semiconductor layer.