Epitaxially forming a set of fins in a semiconductor device

摘要

Approaches for enabling epitaxial growth of silicon fins in a device (e.g., a fin field effect transistor device (FinFET)) are provided. Specifically, approaches are provided for forming a set of silicon fins for a FinFET device, the FinFET device comprising: a set of gate structures formed over a substrate, each of the set of gate structures including a capping layer and a set of spacers; an oxide fill formed over the set of gate structures; a set of openings formed in the device by removing the capping layer and the set of spacers from one or more of the set of gate structures; a silicon material epitaxially grown within the set of openings in the device and then planarized; and wherein the oxide fill is etched to expose the silicon material and form the set of fins.

主权项

1. A method for forming a device, the method comprising:
forming a set of gate structures over a substrate, each of the set of gate structures comprising a capping layer and a set of spacers; forming an oxide fill over the set of gate structures; removing the capping layer and the set of spacers from one or more of the set of gate structures to form a set of openings in the device; epitaxially growing a silicon material within the set of openings in the device; planarizing the silicon material; and etching the oxide fill to expose the silicon material.