Semiconductor memory device and manufacturing method thereof

摘要

A semiconductor memory device includes a first insulating portion. The semiconductor memory device further includes a phase-change material element that contacts the first insulating portion. The semiconductor memory device further includes an electrode that contacts a side surface of the phase-change material element, the side surface of the phase-change material element being not parallel to a top surface of the electrode. The semiconductor memory device further includes a second insulating portion surrounding the phase-change material element.

主权项

1. A method for manufacturing a semiconductor memory device, the method comprising:
providing a first insulating portion; forming an electrode layer that overlaps and directly contacts the first insulating portion; patterning the electrode layer to reduce a width of the electrode layer; forming a second insulating portion; forming an opening that penetrates through the second insulating portion and the electrode layer to form at least a first electrode; and forming a phase-change material element in the opening, wherein the first electrode contacts a first side surface of the phase-change material element, the first side surface of the phase-change material element being not parallel to a top surface of the first electrode, and wherein a bottom surface of the phase-change material element is at an angle with respect to the first side surface of the phase-change material element, is disposed between a top surface of the phase-change material element and a surface of the first insulating portion, and contacts the surface of the first insulating portion.