| 发明名称 |
SEMICONDUCTOR MEMORY DEVICE, MEMORY SYSTEM INCLUDING THE SAME AND OPERATING METHOD THEREOF |
| 摘要 |
A semiconductor memory device includes a memory cell array including a plurality of memory cells, a peripheral circuit suitable for generating program and erase voltages and applying the program and erase voltages to the plurality of memory cells when program and erase operations are performed on the plurality of memory cells, and a control logic suitable for controlling the peripheral circuit unit during the program and erase operations and counting a pulse number of the program and erase voltages to store a resultant count number as status data. |
| 申请公布号 |
US2015117129(A1) |
申请公布日期 |
2015.04.30 |
| 申请号 |
US201414219838 |
申请日期 |
2014.03.19 |
| 申请人 |
SK hynix Inc. |
发明人 |
JUNG Sung Hyun |
| 分类号 |
G11C7/00 |
主分类号 |
G11C7/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor memory device, comprising:
a memory cell array including a plurality of memory cells; a peripheral circuit suitable for generating program and erase voltages and applying the program and erase voltages to the plurality of memory cells when program and erase operations are performed on the plurality of memory cells; and a control logic suitable for controlling the peripheral circuit unit during the program and erase operations and counting a pulse number of the program and erase voltages to store a resultant count number as status data. |
| 地址 |
Gyeonggi-do KR |
