| 摘要 |
<p>An LED chip and method of forming same, the LED chip comprising: a substrate (100); an N-type semiconductor layer (200) located on the substrate (100); multiple quantum wells (MQW) (300) located in the first area (201) of the N-type semiconductor layer (200); an N electrode (600) located in the second area (202) of the N-type semiconductor layer (200); an electron blocking layer (EBL) (400) located on the MQW (300); a P-type semiconductor layer (500) located on the EBL (400), and having a linear opening passing through the P-type semiconductor layer (500) in the thickness direction thereof and contacting the EBL (400); an isolation layer (800) at least partially located on a part of the P-type semiconductor layer (500); and a P electrode (700) comprising a P electrode wire part (710), a P electrode end part (720) and a P electrode connection part (730). The LED chip has such strong points as low drive voltage and high luminance.</p> |
