发明名称 半導体素子とその製造及び動作方法
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a semiconductor element, and a method of fabricating and operating the semiconductor element. <P>SOLUTION: A semiconductor element includes different nanostructures. For example, the semiconductor element includes a first constituent element formed by a nanowire and a second constituent element formed by a nanoparticle. Here, the nanowire may be an bipolar carbon nanotube. The first constituent element is a channel layer. The second constituent element is a charge trap layer. However, in this instance, the semiconductor element may be a transistor or a memory element. <P>COPYRIGHT: (C)2010,JPO&INPIT</p>
申请公布号 JP5706077(B2) 申请公布日期 2015.04.22
申请号 JP20090229558 申请日期 2009.10.01
申请人 发明人
分类号 H01L21/336;H01L21/8247;H01L27/115;H01L29/788;H01L29/792 主分类号 H01L21/336
代理机构 代理人
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