| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a transistor and manufacturing method therefor with a nitride semiconductor, capable of improving an operation frequency by reducing a parasitic capacitance.SOLUTION: The transistor includes a gate electrode 7 having its lower side of a smaller shape than its upper side and a protection film 8 formed to cover the gate electrode 7 from its upper side. An end section of an undersurface of the gate electrode 7 is in contact with the protection film 8, and the lower side of the gate electrode 7 has regions 9, 10 with no protection film not covered with the protection film 8.</p> |
