发明名称 |
Optoelectronic element and manufacturing method thereof |
摘要 |
An optoelectronic element includes an optoelectronic unit having a first top surface, a first bottom surface opposite to the first top surface, and a lateral surface between the first top surface and the first bottom surface; a first transparent structure covering the lateral surface and exposing the first top surface of the optoelectronic unit; a first insulating layer on the first top surface and the first transparent structure; a second insulating layer on the first insulating layer; a first opening through the first insulating layer and the second insulating layer; and a first conductive layer on the second insulating layer and electrically connecting to the optoelectronic unit via the first opening. |
申请公布号 |
US9000461(B2) |
申请公布日期 |
2015.04.07 |
申请号 |
US201113205987 |
申请日期 |
2011.08.09 |
申请人 |
Epistar Corporation |
发明人 |
Han Cheng-Nan;Lee Tsung-Xian;Hsieh Min-Hsun;Chen Hung-Hsuan;Liu Hsin-Mao;Chen Hsing-Chao;Tao Ching-San;Ni Chih-Peng;Chen Tzer-Perng;Wu Jen-Chau |
分类号 |
H01L33/46;H01L33/00;H01L33/20;H01L33/38;H01L33/48;H01L33/58 |
主分类号 |
H01L33/46 |
代理机构 |
Ditthavong & Steiner, P.C. |
代理人 |
Ditthavong & Steiner, P.C. |
主权项 |
1. An optoelectronic element, comprising:
an optoelectronic unit comprising a first metal layer, a lateral surface, and a top surface which comprises a portion not covered by the first metal layer; a first transparent structure covering the lateral surface; a first conductive layer arranged on the top surface and electrically connected to the first metal layer; and a reflective layer arranged on the top surface and comprising:
a first portion overlapping the portion and the first conductive layer; anda second portion overlapping the first conductive layer and the first transparent structure and not overlapping the first portion. |
地址 |
Hsinchu TW |