发明名称 Optoelectronic element and manufacturing method thereof
摘要 An optoelectronic element includes an optoelectronic unit having a first top surface, a first bottom surface opposite to the first top surface, and a lateral surface between the first top surface and the first bottom surface; a first transparent structure covering the lateral surface and exposing the first top surface of the optoelectronic unit; a first insulating layer on the first top surface and the first transparent structure; a second insulating layer on the first insulating layer; a first opening through the first insulating layer and the second insulating layer; and a first conductive layer on the second insulating layer and electrically connecting to the optoelectronic unit via the first opening.
申请公布号 US9000461(B2) 申请公布日期 2015.04.07
申请号 US201113205987 申请日期 2011.08.09
申请人 Epistar Corporation 发明人 Han Cheng-Nan;Lee Tsung-Xian;Hsieh Min-Hsun;Chen Hung-Hsuan;Liu Hsin-Mao;Chen Hsing-Chao;Tao Ching-San;Ni Chih-Peng;Chen Tzer-Perng;Wu Jen-Chau
分类号 H01L33/46;H01L33/00;H01L33/20;H01L33/38;H01L33/48;H01L33/58 主分类号 H01L33/46
代理机构 Ditthavong & Steiner, P.C. 代理人 Ditthavong & Steiner, P.C.
主权项 1. An optoelectronic element, comprising: an optoelectronic unit comprising a first metal layer, a lateral surface, and a top surface which comprises a portion not covered by the first metal layer; a first transparent structure covering the lateral surface; a first conductive layer arranged on the top surface and electrically connected to the first metal layer; and a reflective layer arranged on the top surface and comprising: a first portion overlapping the portion and the first conductive layer; anda second portion overlapping the first conductive layer and the first transparent structure and not overlapping the first portion.
地址 Hsinchu TW