| 发明名称 | Gate-all-around carbon nanotube transistor with selectively doped spacers | ||
| 摘要 | A method of fabricating a semiconducting device is disclosed. A carbon nanotube is formed on a substrate. A portion of the substrate is removed to form a recess below a section of the carbon nanotube. A doped material is applied in the recess to fabricate the semiconducting device. The recess may be between one or more contacts formed on the substrate separated by a gap. | ||
| 申请公布号 | US9000499(B2) | 申请公布日期 | 2015.04.07 |
| 申请号 | US201313971150 | 申请日期 | 2013.08.20 |
| 申请人 | International Business Machines Corporation | 发明人 | Franklin Aaron D.;Koswatta Siyuranga O.;Smith Joshua T. |
| 分类号 | H01L29/78;H01L51/05;B82Y10/00;B82Y99/00;H01L51/00 | 主分类号 | H01L29/78 |
| 代理机构 | Cantor Colburn LLP | 代理人 | Cantor Colburn LLP ;Alexanian Vazken |
| 主权项 | 1. A semiconducting device, comprising: a carbon nanotube on a substrate; a recess formed in a portion of the substrate below a section of the carbon nanotube; and a doped material on exposed surfaces of the recess except for a surface of the section of carbon nanotube. | ||
| 地址 | Armonk NY US | ||