| 摘要 |
Provided is a thin film transistor array which does not employ photolithography for the formation of an interlayer insulating film and has few defects in the interlayer insulating film. This thin film transistor array is provided at least with an insulating substrate (10), a gate electrode (11), a gate insulating film (12), a source electrode (13B), a drain electrode (14), a semiconductor layer (15), a protection layer (16) that covers the semiconductor layer (15), a pixel electrode (18), and an interlayer insulating film (17) that is formed between the drain electrode (14) and the pixel electrode (18). The interlayer insulating film (17) is an organic film or an organic-inorganic mixed film, and in order to connect the pixel electrode (18) to the drain electrode (14), the interlayer insulating film (17) has a via hole (40) in a part of the portion where the drain electrode (14) is formed. The drain electrode (14) has an opening portion that is positioned within the via hole (40) and is obtained by forming an opening in the electrode material, and a thiol group or a disulfide group is present on the drain electrode (14) within the via hole (40). |
