Transistor Device with a Field Electrode

摘要

A transistor device includes a source region, a drift region, and a body region arranged between the source region and the drift region. A gate electrode is adjacent to the body region, and dielectrically insulated from the body region by a gate dielectric. A field electrode arrangement is adjacent to the drift region and the body region, spaced apart from the gate electrode in a first direction that is perpendicular to a vertical direction in which the source region and the drift region are spaced apart, and includes a field electrode and a field electrode dielectric. The field electrode dielectric dielectrically insulates the field electrode at least from the drift region. The field electrode arrangement has a first width adjacent the drift region, and a second width adjacent the body region and the first width is larger than the second width.

主权项

1. A transistor device, comprising:
a source region, a drift region, and a body region arranged between the source region and the drift region; a gate electrode adjacent to the body region, and dielectrically insulated from the body region by a gate dielectric; and a field electrode arrangement adjacent to the drift region and the body region, spaced apart from the gate electrode in a first direction that is perpendicular to a vertical direction in which the source region and the drift region are spaced apart, and comprising a field electrode and a field electrode dielectric, wherein the field electrode dielectric dielectrically insulates the field electrode at least from the drift region, wherein the field electrode arrangement has a first width adjacent the drift region, and a second width adjacent the body region, and wherein the first width is larger than the second width.