ETCHING METHOD, ETCHING DEVICE, AND STORAGE MEDIUM

摘要

PROBLEM TO BE SOLVED: To improve throughput in silicon oxide film etching processing which performs an alteration step and a heating step in the same chamber.SOLUTION: A silicon oxide film etching method comprises the steps of: generating a reaction product by supplying a halogen element-containing gas and a mixed gas containing a basic gas to a surface of the silicon oxide film and altering the silicon oxide film (alteration step); and removing the reaction product by heating (heating step). The silicon oxide film etching method performs the alteration step and the heating step in the same chamber. The heating step heats the reaction product by heating means for selectively heating the reaction product.