发明名称 |
Method of forming a semiconductor power switching device, structure therefor, and power converter |
摘要 |
At least one exemplary embodiment is directed to a semiconductor power switching device including a ctrl switch, a sync switch, where a resistor is electrically connected between the ctrl switch and the sync switch. |
申请公布号 |
US8981748(B2) |
申请公布日期 |
2015.03.17 |
申请号 |
US201113205282 |
申请日期 |
2011.08.08 |
申请人 |
Semiconductor Components Industries, LLC |
发明人 |
Guitart Jaume Roig;Bauwens Filip |
分类号 |
G05F1/00;H03K17/06;H03K17/567;H01L29/40;H01L29/78 |
主分类号 |
G05F1/00 |
代理机构 |
|
代理人 |
Hightower Robert F. |
主权项 |
1. A semiconductor power switching device comprising:
a ctrl switch, where the ctrl switch is a shield gate transistor; a sync switch, where the sync switch is a transistor; an inductor; and a resistor coupled in series with the inductor, where the series coupled inductor and resistor couple a first plate on the ctrl switch with a source of the sync switch. |
地址 |
Phoenix AZ US |