发明名称 Method of forming a semiconductor power switching device, structure therefor, and power converter
摘要 At least one exemplary embodiment is directed to a semiconductor power switching device including a ctrl switch, a sync switch, where a resistor is electrically connected between the ctrl switch and the sync switch.
申请公布号 US8981748(B2) 申请公布日期 2015.03.17
申请号 US201113205282 申请日期 2011.08.08
申请人 Semiconductor Components Industries, LLC 发明人 Guitart Jaume Roig;Bauwens Filip
分类号 G05F1/00;H03K17/06;H03K17/567;H01L29/40;H01L29/78 主分类号 G05F1/00
代理机构 代理人 Hightower Robert F.
主权项 1. A semiconductor power switching device comprising: a ctrl switch, where the ctrl switch is a shield gate transistor; a sync switch, where the sync switch is a transistor; an inductor; and a resistor coupled in series with the inductor, where the series coupled inductor and resistor couple a first plate on the ctrl switch with a source of the sync switch.
地址 Phoenix AZ US