发明名称 Semiconductor Light Emitting Element
摘要 A semiconductor light emitting element include a semiconductor layer in which a first semiconductor layer, a second semiconductor layer, and a light emitting layer that is disposed between the first semiconductor layer and the second semiconductor layer are disposed. The first semiconductor layer has a step portion protruding more outwards than the light emitting layer and the second semiconductor layer. A plurality of first recesses is formed on side surfaces of the semiconductor layer not including the light emitting layer along a deposition direction of the semiconductor layer and along a direction intersecting with the deposition direction of the semiconductor layer and a plurality of second recesses is found on side surfaces of the semiconductor layer including the light emitting layer along the deposition direction of the semiconductor layer and along the direction intersecting with the deposition direction of the semiconductor layer.
申请公布号 US2015069419(A1) 申请公布日期 2015.03.12
申请号 US201414476603 申请日期 2014.09.03
申请人 TOYODA GOSEI CO., LTD. 发明人 MORI Takahiro;SAITO Yoshiki
分类号 H01L33/24 主分类号 H01L33/24
代理机构 代理人
主权项 1. A semiconductor light emitting element comprising a semiconductor layer in which a first semiconductor layer, a second semiconductor layer, and a light emitting layer that is disposed between the first semiconductor layer and the second semiconductor layer are disposed, wherein the first semiconductor layer has a step portion protruding more outwards than the light emitting layer and the second semiconductor layer at at least a part of an outer peripheral portion thereof, and wherein a plurality of first recesses is formed on side surfaces of the semiconductor layer not including the light emitting layer on the basis of the step portion as a border along a deposition direction of the semiconductor layer and along a direction intersecting with the deposition direction of the semiconductor layer and a plurality of second recesses is formed on side surfaces of the semiconductor layer including the light emitting layer along the deposition direction of the semiconductor layer and along the direction intersecting with the deposition direction of the semiconductor layer.
地址 Kiyosu-shi JP
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