SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device with adjusted threshold is provided. In a semiconductor device including a semiconductor, a source or drain electrode electrically connected to the semiconductor, a first gate electrode and a second gate electrode between which the semiconductor is provided, a charge trap layer provided between the first gate electrode and the semiconductor, and a gate insulating layer provided between the second gate electrode and the semiconductor, a threshold is increased by trapping electrons in the charge trap layer by keeping a potential of the first gate electrode at a potential higher than a potential of the source or drain electrode for 1 second or more while heating. After the threshold adjustment process, the first gate electrode is removed or insulated from other circuits. Alternatively, a resistor may be provided between the first gate electrode and other circuits.

主权项

1. A semiconductor device comprising:
a first electrode; an oxide semiconductor layer over the first electrode; an insulating layer between the first electrode and the oxide semiconductor layer; a charge trap layer over the oxide semiconductor layer; and a third electrode and a fourth electrode each between the oxide semiconductor layer and the charge trap layer, and in electrical contact with the oxide semiconductor layer.