| 摘要 |
PROBLEM TO BE SOLVED: To solve a problem of field concentration at a residual part formed by an etching residue which has a sharp tip and exists on an outer peripheral end of a Schottky electrode and a displacement current at the time of a high-frequency switching operation of a SBD (Schottky Barrier Diode).SOLUTION: A silicon carbide semiconductor device comprises: a first conductivity type drift layer 1b; a second conductivity type guard ring region 2 in the drift layer 1b; a field insulation film 3 formed to surround the guard ring region 2; a Schottky electrode 4 which is formed to cover the drift layer 1b and a guard ring layer 1b which are exposed on a surface inside the guard ring region 2 and has an outer peripheral end on the field insulation film 3; and a surface electrode pad 5 formed on the Schottky electrode 4. The surface electrode pad 5 has an outer peripheral end which contacts the field insulation film 3 across the outer peripheral end of the Schottky electrode 4. |
