BLANK MASKS FOR EXTREME ULTRA VIOLET LITHOGRAPHY, METHODS OF FABRICATING THE SAME, AND METHODS OF CORRECTING REGISTRATION ERRORS THEREOF

摘要

A blank mask includes a substrate having a first surface and a second surface which are opposite to each other. The substrate includes a trench having a predetermined depth from the second surface. A reflection layer is disposed on the first surface of the substrate to reflect extreme ultraviolet (EUV) rays. An absorption layer is disposed on the reflection layer opposite to the substrate to absorb EUV rays. A conductive layer is disposed in the trench to expose portions of the substrate. The conductive layer includes first conductive lines and second conductive lines intersecting the first conductive lines, and the exposed portions of the substrate are two dimensionally arrayed to have island shapes.

主权项

1. A blank mask for extreme ultraviolet (EUV) photolithography, the blank mask comprising:
a substrate having a first surface and a second surface which are opposite to each other, the substrate including a trench having a predetermined depth from the second surface; a reflection layer disposed on the first surface of the substrate to reflect extreme ultraviolet (EUV) rays; an absorption layer disposed on the reflection layer opposite to the substrate to absorb extreme ultraviolet (EUV) rays; and a conductive layer disposed in the trench to expose portions of the substrate, wherein the conductive layer includes first conductive lines and second conductive lines intersecting the first conductive lines, and the exposed portions of the substrate are two dimensionally arrayed to have island shapes.