发明名称 Fabrication of interconnected thin-film concentrator cells using shadow masks
摘要 A method for fabricating thin film solar cells for a concentrated photovoltaic system uses three shadow masks. The first mask, used to deposit a back contact layer, has multiple horizontal and vertical lines defining columns and rows of cells, and multiple tabs each located in a cell along a center of a vertical border. The second mask, used to deposit a CIGS absorption layer, a window layer and a transparent contact layer, is similar to the first mask except the tabs are located along the opposite vertical border of the cells. The third mask, used to deposit a metal grid layer, has multiple bus bar openings and finger openings. Each bus bar opening is located along a horizontal center line of a cell and overlaps the second tab of a neighboring cell. The cells in a horizontal row are connected in series, forming a linear solar receiver.
申请公布号 US8963270(B2) 申请公布日期 2015.02.24
申请号 US201213568654 申请日期 2012.08.07
申请人 Pu Ni Tai Neng (HangZhou) Co., Limited 发明人 Wang Dong;Yu Pingrong;Li Xuegeng
分类号 H01L27/146;H01L31/00;H01L31/101;H01L29/06 主分类号 H01L27/146
代理机构 Chen Yoshimura LLP 代理人 Chen Yoshimura LLP
主权项 1. A set of shadow masks used for fabrication of interconnected thin film solar cells for a concentrated photovoltaic system, the concentrated photovoltaic system comprising a substrate, a back contact layer, a copper indium gallium selenide absorption layer, a buffer layer, a transparent conductive layer, and metal gate lines, the set of shadow masks comprising: a first mask, used for depositing the back contact layer on the substrate, the first mask having a first plurality of parallel lines and a second plurality of parallel lines perpendicular to each other to define a plurality of open blocks corresponding to a plurality of cells, the first mask further having a plurality of first tabs each located in a block along a center of a first border of the block which is parallel to the second plurality of parallel lines; a second mask, used for depositing the copper indium gallium selenide absorption layer, the buffer layer and the transparent conductive layer on the back contact layer, the second mask having a first plurality of parallel lines and a second plurality of parallel lines aligned with the corresponding first plurality and second plurality of parallel lines of the first mask to define a plurality of open blocks corresponding to the blocks of the first mask, the second mask further having a plurality of second tabs each located in a block along a center of a second border of the block which is parallel to the second plurality of parallel lines and opposite the first border; and a third mask, used for depositing the metal gate lines, the third mask having a plurality of bus bar openings and a plurality of sets of finger openings, each bus bar opening being located along a center line of each block which is parallel to the first plurality of parallel lines of the first mask, and each bus bar opening at least partially overlapping the second tab of a neighboring block, each set of finger openings being located in a block and connected to the corresponding bus bar opening.
地址 Hangzhou CN