HIGH SMSR UNIDIRECTIONAL ETCHED LASERS AND LOW BACK-REFLECTION PHOTONIC DEVICE

摘要

Unidirectionality of lasers is enhanced by forming one or more etched gaps in the laser cavity. The gaps may be provided in any segment of a laser, such as any leg of a ring laser, or in one leg of a V-shaped laser. A Brewster angle facet at the distal end of a photonic device coupled to the laser reduces back-reflection into the laser cavity. A distributed Bragg reflector is used at the output of a laser to enhance the side-mode suppression ratio of the laser.

主权项

1. A semiconductor photonic device, comprising:
a substrate; an epitaxial structure deposited on said substrate; a cavity having at least one segment formed in said epitaxial structure, said cavity forming a photonic element selected from the group comprising an electroabsorption modulator and a semiconductor optical amplifier and including an entrance facet and an exit facet; and a laser with a high side mode suppression ratio formed in said epitaxial structure, said laser having an output facet for emitting an output beam that is coupled to said entrance facet of said photonic element; said laser output facet and said photonic element entrance facet being positioned relative to one another so that said output beam is emitted at an angle relative to said laser output facet to reduce back reflection of light from said photonic device to said laser.