| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an exposure method and the like for improved yield in production of devices. <P>SOLUTION: In a step 205, a measurement inspection device 120 measures a mark on a wafer W. In a step 207, the alignment process method is optimized for wafer alignment performed with the exposure device. In the wafer alignment in a step 209, an optimized alignment method is used for wafer alignment. In a step 213 after exposure, overlapping error is measured. In a step 215, based on the measurement result, the standard is adjusted for optimizing the acquisition method about shape information of a pattern region. <P>COPYRIGHT: (C)2008,JPO&INPIT |
