| 发明名称 |
METAL PAD OFFSET FOR MULTI-LAYER METAL LAYOUT |
| 摘要 |
A semiconductor device includes a first layer including a number of first layer metal pads, a second layer formed on top of the first layer, the second layer including a number of second layer metal pads, and vias connecting the first layer metal pads to the second layer metal pads. A surface area overlap between the first layer metal pads and the second layer metal pads is below a defined threshold. |
| 申请公布号 |
US2015048518(A1) |
申请公布日期 |
2015.02.19 |
| 申请号 |
US201314059102 |
申请日期 |
2013.10.21 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Chen I-Chih;Chen Ying-Hao;Jeng Chi-Cheng;Chien Volume;Tsai Fu-Tsun;Lin Kun-Huei |
| 分类号 |
H01L23/48;G06F17/50 |
主分类号 |
H01L23/48 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a first layer including a first metal pad; a second layer formed on top of the first layer, the second layer including a second metal pad; a third layer formed on top of the second layer, the third layer including a third metal pad, wherein the third metal pad is aligned with the first metal pad, and wherein the third metal pad is not aligned with the second metal pad; a first via connecting the first metal pad to the second metal pad; a second via connecting the second metal pad to the third metal pad, wherein the second via is aligned with the first via; and wherein, a surface area overlap between the first metal pad and the second metal pad is below a defined threshold. |
| 地址 |
Hsin-Chu TW |
