发明名称 SPATIAL SEMICONDUCTOR STRUCTURE AND METHOD OF FABRICATING THE SAME
摘要 A method of fabricating a spatial semiconductor structure includes steps as follows. Firstly, a semiconductor substrate is provided. Then, a first mask layer is formed above the semiconductor substrate. Then, at least a first opening is formed in the first mask layer and exposes a portion of a surface of the semiconductor substrate. Then, a first semiconductor pattern is formed in the first opening. Then, a second mask layer is formed over the first semiconductor pattern and the first mask layer. Then, at least a second opening is formed through the second mask layer to the first mask layer and exposes another portion of the surface of the semiconductor substrate. And, a second semiconductor pattern is formed in the second opening.
申请公布号 US2015048486(A1) 申请公布日期 2015.02.19
申请号 US201313968392 申请日期 2013.08.15
申请人 UNITED MICROELECTRONICS CORPORATION 发明人 Shih Hung-Lin;Liu Chih-Chien;Chen Jei-Ming;Teng Wen-Yi;Lo Chieh-Wen
分类号 H01L21/308;H01L29/06 主分类号 H01L21/308
代理机构 代理人
主权项 1. A method of fabricating a spatial semiconductor structure, comprising steps as follows: providing a semiconductor substrate; forming a first mask layer above the semiconductor substrate; forming at least a first opening in the first mask layer and exposing a portion of a surface of the semiconductor substrate; forming a first semiconductor pattern in the first opening; forming a second mask layer over the first semiconductor pattern and the first mask layer; forming at least a second opening through the second mask layer to the first mask layer and exposing another portion of the surface of the semiconductor substrate; and forming a second semiconductor pattern in the second opening.
地址 Hsinchu TW