发明名称 |
SPATIAL SEMICONDUCTOR STRUCTURE AND METHOD OF FABRICATING THE SAME |
摘要 |
A method of fabricating a spatial semiconductor structure includes steps as follows. Firstly, a semiconductor substrate is provided. Then, a first mask layer is formed above the semiconductor substrate. Then, at least a first opening is formed in the first mask layer and exposes a portion of a surface of the semiconductor substrate. Then, a first semiconductor pattern is formed in the first opening. Then, a second mask layer is formed over the first semiconductor pattern and the first mask layer. Then, at least a second opening is formed through the second mask layer to the first mask layer and exposes another portion of the surface of the semiconductor substrate. And, a second semiconductor pattern is formed in the second opening. |
申请公布号 |
US2015048486(A1) |
申请公布日期 |
2015.02.19 |
申请号 |
US201313968392 |
申请日期 |
2013.08.15 |
申请人 |
UNITED MICROELECTRONICS CORPORATION |
发明人 |
Shih Hung-Lin;Liu Chih-Chien;Chen Jei-Ming;Teng Wen-Yi;Lo Chieh-Wen |
分类号 |
H01L21/308;H01L29/06 |
主分类号 |
H01L21/308 |
代理机构 |
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代理人 |
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主权项 |
1. A method of fabricating a spatial semiconductor structure, comprising steps as follows:
providing a semiconductor substrate; forming a first mask layer above the semiconductor substrate; forming at least a first opening in the first mask layer and exposing a portion of a surface of the semiconductor substrate; forming a first semiconductor pattern in the first opening; forming a second mask layer over the first semiconductor pattern and the first mask layer; forming at least a second opening through the second mask layer to the first mask layer and exposing another portion of the surface of the semiconductor substrate; and forming a second semiconductor pattern in the second opening. |
地址 |
Hsinchu TW |