| 摘要 |
PROBLEM TO BE SOLVED: To reduce thermal damage of irradiation to a substrate to be treated without decreasing a treatment speed, and improve a throughput and accuracy of dimensions. SOLUTION: The pattern lithographic method, in which an LSI pattern is plotted on a substrate coated with a photosensitive resist by using an electron beam, includes a step S11 of calculating an areal density of a graphic pattern in auxiliary deflecting regions separated as small regions from a main deflecting region, a step S12 of referring database expressing a relation of a pattern areal density, the maximum shot size, and the substrate temperature, a step S13 of defining the substrate temperature at the optimum lithography on the basis of the database, and a step S14 of determining the maximum shot size according to the areal density while keeping the substrate temperature in a permissible zone.
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