发明名称 METHOD OF DEPOSITING FILM ON SUBSTRATE, AND SYSTEM FOR DELIVERING VAPORIZED PRECURSOR COMPOUND
摘要 PROBLEM TO BE SOLVED: To provide a method for supplying a gaseous mixture of a precursor compound and carrier gas containing a vaporized precursor substantially at a constant concentration to one or more vapor deposition chambers (or reactors).SOLUTION: The system has an evaporation vessel 15 housing a liquid precursor compound 16, and the evaporation vessel is housed in a temperature control chamber 21. Carrier gas passes through a control valve 23, enters into the evaporation vessel 15 through a carrier gas inlet 17, and forms a gas flow of a mixture of the precursor compound gas and the carrier gas. A gas exit line 24 has a pressure transducer 26, a concentration transducer 28, and a pressure releasing valve 32, which are electrically connected to a control device 29 respectively. When excessive pressure is generated in the system, signals are transmitted from the control valve 29 to the pressure release valve 32, and the pressure release valve 32 adjusts total pressure by emitting (or venting) one part of the gas flow.
申请公布号 JP2015028216(A) 申请公布日期 2015.02.12
申请号 JP20140181173 申请日期 2014.09.05
申请人 ROHM & HAAS ELECTRONIC MATERIALS LLC 发明人 WOELK EGBERT;DICARLO RONALD L
分类号 C23C16/455;H01L21/205 主分类号 C23C16/455
代理机构 代理人
主权项
地址