发明名称 |
Memory Arrays, Semiconductor Constructions, and Methods of Forming Semiconductor Constructions |
摘要 |
Some embodiments include memory arrays. The memory arrays may have digit lines under vertically-oriented transistors, with the digit lines interconnecting transistors along columns of the array. Each individual transistor may be directly over only a single digit line, with the single digit line being entirely composed of one or more metal-containing materials. The digit lines can be over a deck, and electrically insulative regions can be directly between the digit lines and the deck. Some embodiments include methods of forming memory arrays. A plurality of linear segments of silicon-containing material may be formed to extend upwardly from a base of the silicon-containing material. The base may be etched to form silicon-containing footings under the linear segments, and the footings may be converted into metal silicide. The linear segments may be patterned into a plurality of vertically-oriented transistor pedestals that extend upwardly from the metal silicide footings. |
申请公布号 |
US2015014766(A1) |
申请公布日期 |
2015.01.15 |
申请号 |
US201414502978 |
申请日期 |
2014.09.30 |
申请人 |
Micron Technology, Inc. |
发明人 |
Heineck Lars P.;Surthi Shyam;Guha Jaydip |
分类号 |
H01L27/108;H01L29/66;H01L29/778 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Boise ID US |