NONVOLATILE MEMORY DEVICE AND PROGRAM METHOD THEREOF

摘要

The present invention relates to a program method of a nonvolatile memory device capable of programming a memory cell by executing a plurality of program loops. The program method according to the embodiment of the present invention includes the steps of: detecting whether a level of a program pulse to be applied to the memory cell or a loop count is included in a specific range; charging a bit line of the memory cell at a first charging speed or a second charging speed which is slower than the first charging speed, and applying the program pulse to a word line of the memory cell. The specific range corresponds to an operation section in which the level of a current peak inputted to the bit line is increased over a reference value.