发明名称 |
Multilayer substrate, method for producing a multilayer substrate, and device |
摘要 |
<p>There is provided a multilayer substrate comprising, at least, a single crystal MgO substrate, an iridium (Ir) film heteroepitaxially grown on the MgO substrate, a diamond film vapor-deposited on the Ir film, wherein crystallinity of the Ir film is that a full width at half maximum (FWHM) of a diffracted intensity peak in 2 ¸=46.5° or 2¸=47.3° attributed to Ir (200) analyzed by X-ray diffraction method with a wavelength of »=1.54 Å is 0.40° or less. Thereby, there is provided a multilayer substrate that is delamination-proof at the respective interfaces between the MgO substrate and the Ir film and between the Ir film and the diamond film, and, particularly, that has a single crystal diamond film of a large area as a continuous film.</p> |
申请公布号 |
EP1703002(B1) |
申请公布日期 |
2014.12.31 |
申请号 |
EP20060251277 |
申请日期 |
2006.03.09 |
申请人 |
SHIN-ETSU CHEMICAL COMPANY, LTD.;SAWABE, ATSUHITO |
发明人 |
NOGUCHI, HITOSHI;SAWABE, ATSUHITO |
分类号 |
C30B29/04;C30B25/10;C30B29/16;H01L21/02 |
主分类号 |
C30B29/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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