PEC biasing technique for LEDs

摘要

Each LED in an array of LEDs mounted on a submount wafer has at least a first semiconductor layer exposed and connected to a first electrode of each LED. The submount wafer has a first metal portion bonded to the first electrode of each LED for providing an energization current to each LED. The submount wafer also has a second metal portion running along and proximate to the first metal portion but not electrically connected to the first metal portion. The second metal portion may be interdigitated with the first metal portion. The second metal portion is connected to a bias voltage. When the wafer is immersed in an electrically conductive solution for electrochemical (EC) etching of the exposed first semiconductor layer, the solution electrically connects the second metal portion to the first metal portion for biasing the first semiconductor layer during the EC etching.

主权项

1. A method for fabricating a light emitting diode (LED) structure comprising:
providing a plurality of LEDs, each LED comprising at least a first semiconductor layer, the first semiconductor layer being exposed and connected to a first electrode of each LED; providing a submount wafer having a first metal portion electrically connected to the first electrode of each LED for providing an energization current to each LED, the submount wafer having a second metal portion proximate to the first metal portion but not electrically connected to the first metal portion; immersing at least the first semiconductor layer in a solution for electrochemical (EC) etching, the solution having a conductance that electrically connects the second metal portion to the first metal portion; and biasing the second metal portion with a first biasing voltage to bias the first semiconductor layer during the EC etching for etching the first semiconductor layer.