| 摘要 |
An array substrate having a thin film transistor with an oxide semiconductor layer, comprising: gate and data lines formed on the array substrate and defining a pixel region, wherein the thin film transistor is located in a device area of the pixel region; a light-shielding pattern arranged on the array substrate in the device area; an auxiliary line connected to the light-shielding pattern and supplying a constant voltage to the light-shielding pattern, wherein the auxiliary line is parallel to and spaced apart from one of the gate and data lines; a buffer layer of an inorganic material and located on the light-shielding pattern and a surface of the array substrate, wherein the oxide semiconductor layer is located on the buffer layer and the light-shielding pattern; an inter-insulating layer on the buffer layer, wherein the oxide semiconductor layer includes an active portion located entirely on the light-blocking pattern and having a channel formed thereon, and conductive portions located on sides of the active portion. |
