SEMICONDUCTOR DEVICE

摘要

A semiconductor device includes at least one channel layer, insulating layers stacked on top of one another while surrounding the at least one channel layer, first grooves and second grooves alternately interposed between the insulating layers, wherein the first groves have a greater width than the second grooves having a second width, and conductive layers formed in the first grooves.

主权项

1. A semiconductor device, comprising:
a channel layer; a first insulating layer surrounding the channel layer; a second insulating layer over and spaced apart from the first insulating layer to form a first groove between the first insulating layer and the second insulating layer, the first groove having a width W1; a third insulating layer over and spaced apart from the second insulating layer to form a second groove between the second insulating layer and the third insulating layer, the second groove having a width W2, wherein the W1 is greater than W2; and a first conductive layer in the first groove.