RUTHENIUM PRECURSORS, PREPARATION METHOD THEREOF AND PROCESS FOR THE FORMATION OF THIN FILMS USING THE SAME

摘要

The present invention relates to a ruthenium precursor represented by Chemical formula 1. The ruthenium precursor: has excellent thermal stability and increased volatility; does not use oxygen during a thin film deposition process; and thus can form a ruthenium thin film with high quality. In Chemical formula 1, R1 to R16 are independently hydrogen; otherwise, R1 to R16 are independently linear alkyl groups or branched alkyl groups.