发明名称 POWER TRANSISTOR WITH HEAT DISSIPATION AND METHOD THEREFORE
摘要 A device comprising a substrate, an integrated circuit (IC) die attached to the substrate on one side, a plurality of contact pads on an active side of the IC die, a plurality of thermally and electrically conductive legs, each of the legs attached to a respective one of the contact pads, and an encapsulating material formed around the substrate, the IC die, and a portion of the legs. A contact end of each of the legs is exposed, and one of the contact ends conducts a signal from a transistor in the IC die.
申请公布号 US2014327124(A1) 申请公布日期 2014.11.06
申请号 US201414331724 申请日期 2014.07.15
申请人 FREESCALE SEMICONDUCTOR, INC. 发明人 DING MIN
分类号 H01L23/367;H01L23/495 主分类号 H01L23/367
代理机构 代理人
主权项
地址 AUSTIN TX US