| 摘要 |
<p>PURPOSE: A semiconductor device and a method of manufacturing the same are provided to manufacture a thin film transistor having p-type and n-type metal oxide films by using the p-type and n-type metal oxide as an active layer of the thin film transistor. CONSTITUTION: A substrate is defined by a first area(A) and a second area. A first type thin film transistor is formed at a first area and has an N-type metal oxide active layer(130N). A second type thin film is formed on the second area and has a P- type metal oxide active layer(130P). The first type thin film transistor includes a first gate electrode(110N) having a part of overlapped with an N-type metal oxide active layer, and it also includes a first source and a drain electrode(150N,160N) having a part connected to the N type metal oxide active layer.</p> |
