Semiconductor device and method of manufacturing the same

摘要

A semiconductor device in which misalignment does not cause short-circuiting and inter-wiring capacitance is decreased. Plural wirings are provided in a first interlayer insulating layer. An air gap is made between at least one pair of wirings in the layer. A second interlayer insulating layer lies over the wirings and first interlayer insulating layer. The first bottom face of the second interlayer insulating layer is exposed to the air gap. When a pair of adjacent wirings whose distance is shortest are first wirings, the upper ends of the first interlayer insulating layer between the first wirings are in contact with the first wirings' side faces. The first bottom face is below the first wirings' upper faces. b/a≦0.5 holds where a represents the distance between the first wirings and b represents the width of the portion of the first interlayer insulating layer in contact with the first bottom face.

主权项

1. A semiconductor device comprising:
a first interlayer insulating layer comprising a first side face and a second side face; a plurality of wirings provided in the first interlayer insulating layer; an air gap made between at least one pair of the wirings in the first interlayer insulating layer; and a second interlayer insulating layer provided over the wirings and the first interlayer insulating layer with a first bottom face thereof exposed to the air gap, wherein the pair of adjacent wirings having a shortest distance there between are first wirings, the first wirings having side faces and upper faces, wherein the first side face of the first interlayer insulating layer is in contact with each of the first wirings; wherein the second side face of the first interlayer insulating layer is exposed to the air gap and is in contact with a bottom face of the air gap, wherein the first side face of the first interlayer insulating layer forms a first angle with one of the side faces of the first wirings, and the second side face of the first interlayer insulating layer forms a second angle with a plane parallel to the one of the side faces of the first wirings, and wherein the first angle is larger than the second angle.