| 发明名称 | Carrier bonding and detaching processes for a semiconductor wafer | ||
| 摘要 | The present invention provides a temporary carrier bonding and detaching process. A first surface of a semiconductor wafer is mounted on a first carrier by a first adhesive layer, and a first isolation coating disposed between the first adhesive layer and the first carrier. Then, a second carrier is mounted on the second surface of the semiconductor wafer. The first carrier is detached. Then, the first surface of the semiconductor wafer is mounted on a film frame. The second carrier is detached. The method of the present invention utilizes the second carrier to support and protect the semiconductor wafer, after which the first carrier is detached. Therefore, the semiconductor wafer will not be damaged or broken, thereby improving the yield rate of the semiconductor process. Furthermore, the simplicity of the detaching method for the first carrier allows for improvement in efficiency of the semiconductor process. | ||
| 申请公布号 | US8865520(B2) | 申请公布日期 | 2014.10.21 |
| 申请号 | US201113216063 | 申请日期 | 2011.08.23 |
| 申请人 | Advanced Semiconductor Engineering, Inc. | 发明人 | Yang Kuo-Pin;Hsiao Wei-Min;Hung Cheng-Hui |
| 分类号 | H01L21/00;H01L21/20;H01L21/30;H01L21/46;H01L21/48;H01L21/683 | 主分类号 | H01L21/00 |
| 代理机构 | Morgan Law Offices, PLC | 代理人 | Morgan Law Offices, PLC |
| 主权项 | 1. A method for handling a semiconductor wafer, comprising: attaching a first carrier to an active surface of the semiconductor wafer using a first adhesive, the first carrier including at least one recess extending partially into the first carrier and allowing a portion of the first adhesive to flow therein; exposing a tip of at least one conductive pillar formed in the semiconductor wafer by removing a portion of the inactive surface; covering the exposed tips with a passivation layer; and thinning the passivation layer so that the tips protrude from the passivation layer. | ||
| 地址 | TW | ||