| 主权项 |
1. An impedance tunable semiconductor component, said semiconductor component comprising
a first conductive region, and a second region said first conductive region comprising a first type dopant composition said second region comprising a second type dopant composition said first conductive region and said second region being contiguous, said first conductive region defining a laid down base conductive path, said second type dopant composition having a dopant profile configured to render said second type dopant composition non-conductive relative to said first type dopant composition said first conductive region comprising a first link member and a second link member, said first and second link members being disposed in juxtaposition such that said first and second link members are separated by a gap region defined by said second region, said first conductive region having a heat modifiable dopant profile, said second region having a heat modifiable dopant profile, at least with respect to said gap region, characterised in that said semiconductor component further comprises a laid down current mask region disposed between and spaced apart from said first link member and said second link member, said current mask region having a heat modifiable dopant profile, and wherein said current mask region comprises a third type dopant composition different from that of said first and second type dopant compositions such that said current mask region interrupts said gap region for offsetting leakage of electrical current across the gap region between the first link member and the second link member. |
