SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a light-emitting element having a planar electrode structure by forming an n-side electrode without removing a p-type layer; and provide a manufacturing method of the light-emitting element.SOLUTION: A semiconductor light-emitting element comprises: an n-type change formation region 6 formed by changing a region subjected to ion implantation of an impurity within a range from a surface of a p-type layer 4 to reach an n-type layer 2 to an n-type; and an n-side electrode 7 joined to the n-type change formation region. A manufacturing method comprises: a process of ion implanting an impurity under a channeling condition; a process of supplying an impurity by ion implantation under a non-channeling condition or a knock-on phenomenon; a process of annealing an ion-implanted region; and a process of connecting the n-side electrode to a surface of a region changed to the n-type.