Memory storage device and method of manufacturing the same

摘要

A memory storage device including: a lower electrode formed to be separated for each of memory cells; a memory storage layer formed on the lower electrode and capable of recording information according to a change in resistance; and an upper electrode formed on the memory storage layer, wherein the memory storage device includes a first layer formed of metal or metal silicide and a second layer formed on the first layer and formed of a metal nitride, the lower electrode is formed by lamination of the first layer and the second layer and formed such that only the first layer is in contact with a lower layer and only the second layer is in contact with the memory storage layer, which is an upper layer, the memory storage layer is formed in common to plural memory cells, and the upper electrode is formed in common to the plural memory cells.

主权项

1. A method of manufacturing a memory storage device, the method comprising:
(a) forming, in an insulating layer, a connection hole extending from a surface thereof to a connection point in a lower layer; (b) forming, in the connection hole, a metal film with thickness smaller than a depth of the connection hole; (c) filling a remainder of the connection hole and covering the insulating layer surface with a metal nitride layer; (d) removing those portions of the metal film and the metal nitride layer present above the insulating layer surface; (e) nitriding a portion of the metal film at the insulating layer surface and insulate un-nitrided metal film from the insulating surface; and (f) forming a the memory storage layer on the surface; and (g) forming an upper electrode on the memory storage layer.