发明名称 |
TUNNELING DIODE, TUNNELING TRANSISTOR, TUNNELING PHOTODIODE, AND TUNNELING PHOTOTRANSISTOR WITH THE STRUCTURE OF GRAPHENE-INSULATOR-SEMICONDUCTOR |
摘要 |
A tunneling diode with a graphene-insulator-semiconductor structure according to the present invention includes a graphene layer, a non conductive layer which is stacked on the lower side of the graphene layer, a semiconductor layer which is stacked on the lower side of the non conductive layer, a first electrode which is formed on the graphene layer, and a second electrode which is formed on the semiconductor layer. |
申请公布号 |
KR20140110473(A) |
申请公布日期 |
2014.09.17 |
申请号 |
KR20130024860 |
申请日期 |
2013.03.08 |
申请人 |
UNIVERSITY-INDUSTRY COOPERATION GROUP OF KYUNG HEE UNIVERSITY |
发明人 |
CHOI, JAE WU;PARK, HONG GI |
分类号 |
H01L29/772;H01L29/861 |
主分类号 |
H01L29/772 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|