SINGLE ELECTRON TRANSISTOR HAVING NANOPARTICLES OF UNIFORM PATTERN ARRANGEMENT AND METHOD FOR FABRICATING THE SAME

摘要

A transistor and a fabrication method thereof. A transistor includes a channel region including linkers, formed on a substrate, and metallic nanoparticles grown from metal ions bonded to the linkers, a source region disposed at one end of the channel region, a drain region disposed at the other end of the channel region opposite of the source region, and a gate coupled to the channel region and serving to control migration of charges in the channel region. The metallic nanoparticles have a substantially uniform pattern arrangement in the channel region.

主权项

1. A transistor comprising:
a channel region comprising linkers formed on a substrate and metallic nanoparticles grown from metal ions bonded to the linkers; a source region disposed at one end of the channel region; a drain region disposed at the other end of the channel region opposite of the source region; and a gate coupled to the channel region to control migration of charges in the channel region, wherein the metallic nanoparticles have a substantially uniform pattern arrangement in the channel region.